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Proceedings Article

Nanometer-accurate grating fabrication with scanning beam interference lithography

[+] Author Affiliations
Carl G. Chen, Paul T. Konkola, Ralf K. Heilmann, Chulmin Joo, Mark L. Schattenburg

Massachusetts Institute of Technology (USA)

Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, 126 (November 1, 2002); doi:10.1117/12.469431
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From Conference Volume 4936

  • Nano- and Microtechnology: Materials, Processes, Packaging, and Systems
  • Dinesh K. Sood; Ajay P. Malshe; Ryutaro Maeda
  • Melbourne, Australia | December 16, 2002

abstract

We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.

© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Carl G. Chen ; Paul T. Konkola ; Ralf K. Heilmann ; Chulmin Joo and Mark L. Schattenburg
"Nanometer-accurate grating fabrication with scanning beam interference lithography", Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, 126 (November 1, 2002); doi:10.1117/12.469431; http://dx.doi.org/10.1117/12.469431


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