Paper
24 July 2002 Broadband semiconductor saturable-absorber dispersion-controlled mirrors for mid-IR lasers
N. D. Goldina, V. I. Trunov, Efim V. Pestryakov
Author Affiliations +
Proceedings Volume 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems; (2002) https://doi.org/10.1117/12.475962
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus
Abstract
Design of novel integrated structure-semiconductor broadband saturable-absorber dispersion controlled mirrors for mid IR spectral range lasers have bene discussed. The novel design of SESAM is based on the multilayer structure like Gires- Tournios interferometer. High reflector consists of the metal mirror with low losses in this spectral range. Top section consists a few layers forming the linear grown dependence of group delay by resonance effects of interferometer. The thin HgCdTe quantum well layer with nonlinear absorption can be included in transparent semiconductor layer near the antinode of standing wave. This structure has low amounts of nonequal thickness layers that create the high reproducibility way of such type structure experimental realization. SESAM design for Cr:ZnSe laser is analyzed in detail.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. D. Goldina, V. I. Trunov, and Efim V. Pestryakov "Broadband semiconductor saturable-absorber dispersion-controlled mirrors for mid-IR lasers", Proc. SPIE 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems, (24 July 2002); https://doi.org/10.1117/12.475962
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KEYWORDS
Mirrors

Absorption

Semiconductors

Semiconductor lasers

Femtosecond phenomena

Mid-IR

Interferometers

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