Paper
1 August 2002 Development of hard pellicle for 157 nm
Kaname Okada, K. Ootsuka, I. Ishikawa, Yoshiaki Ikuta, H. Kojima, T. Kawahara, T. Minematsu, H. Mishiro, Shinya Kikugawa, Y. Sasuga
Author Affiliations +
Abstract
Projection photolithography at 157 nm is now under research as a possible extension of current 248 nm and planned 193 nm technologies .We have found that a thin-film fused silica glass pellicle would be available to 157nm lithography because of its high durability to F2 laser irradiation . In this paper, we present the performance of the hard pellicle made of AQF. Transmission is 97.6 percent when AR films are coated on both surfaces, and its uniformity at 157.6 nm is better than +/- 0.2 percent, and birefringence is within 1 nm. We developed a new evaluation system of a hard pellicle bending in horizontal position and in vertical position. We achieved less than 1um sagging with 800um thickness membrane and glass frame made of modified fused silica in horizontal position.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaname Okada, K. Ootsuka, I. Ishikawa, Yoshiaki Ikuta, H. Kojima, T. Kawahara, T. Minematsu, H. Mishiro, Shinya Kikugawa, and Y. Sasuga "Development of hard pellicle for 157 nm", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476971
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Cited by 3 scholarly publications.
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KEYWORDS
Pellicles

Silica

Glasses

Lithography

Birefringence

Photomasks

Antireflective coatings

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