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Proceedings Article

Reverse-biased characteristics of GaAs/AlGaAs depleted optical thyristor with low depletion voltage

[+] Author Affiliations
Woon-Kyung Choi, Doo-Gun Kim, Young-Wan Choi

Chung-Ang Univ. (South Korea)

Seok Lee, Deokha Woo, Young Tae Byun, Jae Hun Kim, Sun-Ho Kim

Korea Institute of Science and Technology (South Korea)

Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, 180 (July 23, 2003); doi:10.1117/12.478321
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From Conference Volume 4986

  • Physics and Simulation of Optoelectronic Devices XI
  • Marek Osinski; Hiroshi Amano; Peter Blood
  • San Jose, CA | January 25, 2003

abstract

For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with the switching voltage of 2.85 V and the complete depletion voltage of -8.73 V. In this paper, using a finite difference method (FDM), we calculate the effects of parameters such as doping concentration and thickness of each layer to determine the optimized structure in the view of the fast and low-power-consuming operation.

© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Woon-Kyung Choi ; Doo-Gun Kim ; Young-Wan Choi ; Seok Lee ; Deokha Woo, et al.
"Reverse-biased characteristics of GaAs/AlGaAs depleted optical thyristor with low depletion voltage", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, 180 (July 23, 2003); doi:10.1117/12.478321; http://dx.doi.org/10.1117/12.478321


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