Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display

Hiroshi Amano; Motoaki Iwaya; Shugo Nitta; Y. Tomida; K. Iida; T. Kawashima; S. Fukui; Satoshi Kamiyama; Isamu Akasaki; H. Kinoshita; T. Matsuda; S. Otani

doi:10.1117/12.483614

25 July 2003 Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display

Hiroshi Amano, Motoaki Iwaya, Shugo Nitta, Y. Tomida, K. Iida, T. Kawashima, S. Fukui, Satoshi Kamiyama, Isamu Akasaki, H. Kinoshita, T. Matsuda, S. Otani

Author Affiliations +

Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.483614
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

A new candidate for the lattice-matched metallic substrate, i.e. ZrB₂, for the growth of group-III nitrides is proposed. A low-temperature-deposited-buffer layer is found to be essential for the growth of GaN on ZrB₂. Highly luminescent violet-light-emitting diodes fabricated on ZrB₂ perform as well as or even superior to those fabricated on sapphire. ZrB₂ is easily etched by the solution of HF and HNO₃. Fabrication of a nitride-based flexible display is expected using a thin free-standing GaN film.

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Hiroshi Amano, Motoaki Iwaya, Shugo Nitta, Y. Tomida, K. Iida, T. Kawashima, S. Fukui, Satoshi Kamiyama, Isamu Akasaki, H. Kinoshita, T. Matsuda, and S. Otani "Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.483614

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