Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Sub-nm topography measurement by deflectometry: flatness standard and wafer nanotopography

[+] Author Affiliations
Ralf D. Geckeler, Ingolf Weingaertner

Physikalisch-Technische Bundesanstalt (Germany)

Proc. SPIE 4779, Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components, 1 (November 1, 2002); doi:10.1117/12.451723
Text Size: A A A
From Conference Volume 4779

  • Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components
  • Angela Duparr‰; Bhanwar Singh
  • Seattle, WA | July 07, 2002

abstract

Current demands of the semiconductor industry on the measurement accuracy in lithography have reached nanometer and even sub-nanometer levels. We have built a novel scanning facility based on ESAD (Extended Shear Angle Difference) deflectometry for the ultra-precise and traceable measurement of large near-flat and slightly curved optical surfaces. One primary application of the device is to establish the improved standard for straightness and flatness with sub-nanometer accuracy at PTB. Transfer standards then will allow optical devices, e.g., interferometers and wafer mappers, to be calibrated with high accuracy. The measurement principle is based on the analysis of differences between reflection angles obtained at surface points with large lateral displacements (shears). The ESAD principle minimizes error influences and in first order is independent of stage errors and whole-body movements of the specimen. ESAD scanning does not rely on external reference surfaces of matched topography and allows the accurate calibration of the angle measuring device. The measurands are directly traceable to the SI units of angle and length. We will report in detail on the new ESAD facility for the ultra-precise measurement of large (up to 500 mm in diameter) near-flat optical surfaces. We will present first measurements of a number of plane optical substrates with the device from various fields of application. The main error influences will be discussed, including the calibration of the high-resolution autocollimator used for angle measurement. Investigations into the repeatability, reproducibility and uncertainty of the topography measurement using the new facility at the sub-nanometer level will be presented.

© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Ralf D. Geckeler and Ingolf Weingaertner
"Sub-nm topography measurement by deflectometry: flatness standard and wafer nanotopography", Proc. SPIE 4779, Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components, 1 (November 1, 2002); doi:10.1117/12.451723; http://dx.doi.org/10.1117/12.451723


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.