Paper
20 December 2001 Initial results from the EUV engineering test stand
Daniel A. Tichenor, Avijit K. Ray-Chaudhuri, Sang Hun Lee, Henry N. Chapman, William C. Replogle, Kurt W. Berger, Richard H. Stulen, Glenn D. Kubiak, Leonard E. Klebanoff, John B. Wronosky, Donna J. O'Connell, Alvin H. Leung, Karen J. Jefferson, William P. Ballard, Layton C. Hale, Kenneth L. Blaedel, John S. Taylor, James A. Folta, Eberhard Adolf Spiller, Regina Soufli, Gary E. Sommargren, Donald W. Sweeney, Patrick P. Naulleau, Kenneth A. Goldberg, Eric M. Gullikson, Jeffrey Bokor, David T. Attwood Jr., Uwe Mickan, Ralph M. Hanzen, Eric M. Panning, Pei-yang Yan, John E. Bjorkholm, Charles W. Gwyn
Author Affiliations +
Abstract
The Engineering Test Stand (ETS) is an EUV lithography tool designed to demonstrate full-field EUV imaging and provide data required to accelerate production-tool development. Early lithographic results and progress on continuing functional upgrades are presented and discussed. In the ETS a source of 13.4 nm radiation is provided by a laser plasma source in which a Nd:YAG laser beam is focused onto a xenon- cluster target. A condenser system, comprised of multilayer-coated and grazing incidence mirrors, collects the EUV radiation and directs it onto a reflecting reticle. The resulting EUV illumination at the reticle and pupil has been measured and meets requirements for acquisition of first images. Tool setup experiments have been completed using a developmental projection system with (lambda) /14 wavefront error (WFE), while the assembly and alignment of the final projection system with (lambda) /24 WFE progresses in parallel. These experiments included identification of best focus at the central field point and characterization of imaging performance in static imaging mode. A small amount of astigmatism was observed and corrected in situ, as is routinely done in advanced optical lithographic tools. Pitch and roll corrections were made to achieve focus throughout the arc-shaped field of view. Scan parameters were identified by printing dense features with varying amounts of magnification and skew correction. Through-focus scanned imaging results, showing 100 nm isolated and dense features, will be presented. Phase 2 implementation goals for the ETS will also be discussed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel A. Tichenor, Avijit K. Ray-Chaudhuri, Sang Hun Lee, Henry N. Chapman, William C. Replogle, Kurt W. Berger, Richard H. Stulen, Glenn D. Kubiak, Leonard E. Klebanoff, John B. Wronosky, Donna J. O'Connell, Alvin H. Leung, Karen J. Jefferson, William P. Ballard, Layton C. Hale, Kenneth L. Blaedel, John S. Taylor, James A. Folta, Eberhard Adolf Spiller, Regina Soufli, Gary E. Sommargren, Donald W. Sweeney, Patrick P. Naulleau, Kenneth A. Goldberg, Eric M. Gullikson, Jeffrey Bokor, David T. Attwood Jr., Uwe Mickan, Ralph M. Hanzen, Eric M. Panning, Pei-yang Yan, John E. Bjorkholm, and Charles W. Gwyn "Initial results from the EUV engineering test stand", Proc. SPIE 4506, Soft X-Ray and EUV Imaging Systems II, (20 December 2001); https://doi.org/10.1117/12.450953
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Cited by 17 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Projection systems

Reticles

Semiconducting wafers

Lithography

Monochromatic aberrations

Extreme ultraviolet lithography

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