Analytic approach to understanding the impact of mask errors on optical lithography

Chris A. Mack

doi:10.1117/12.389011

5 July 2000 Analytic approach to understanding the impact of mask errors on optical lithography

Chris A. Mack

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389011
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The characterization of the MEEF for a variety of feature types under a variety of processing conditions is presented. Analytic expressions for the aerial image MEEF under simple incoherent and coherent illumination conditions are derived, including the effect of defocus. Eros in processing, such as focus and exposure errors, also affect the value of the MEEF. Thus, another approach to evaluating the impact of mask errors is to look at the reduction in the process window caused by these errors. Using simulation, a study of the impact of mask CD errors on the overlapping process windows is presented and used as the basis for realistic mask CD specifications.

Citation Download Citation

Chris A. Mack "Analytic approach to understanding the impact of mask errors on optical lithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389011

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