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Proceedings Article

Conformal deposition of LPCVD TEOS

[+] Author Affiliations
Paul McCann

Analog Devices Belfast (United Kingdom)

Kumar Somasundram, Stephen Byrne, Andrew Nevin

Analog Devices Belfast (Ireland)

Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, 329 (September 28, 2001); doi:10.1117/12.442963
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From Conference Volume 4557

  • Micromachining and Microfabrication Process Technology VII
  • Jean Michel Karam; John A. Yasaitis
  • San Francisco, CA | October 22, 2001

abstract

The step coverage of dielectrics is important for the microelectronics industry and critical to Micro-machined products and High Voltage MEMS drivers. The techniques used to fabricate MEMS structures require void free refill processes and even film deposition along deep trenches to protect against etch chemistries. High voltage drivers used to actuate MEMS devices benefit from dielectric isolation, which reduces the need for large tub formation between devices. It also enables 'system on chip' solutions for MEMs devices and protection against voltage spikes. This paper presents a process developed at Analog Devices Belfast that enables an LPCVD TEOS furnace to perform a highly conformal trench refill without equipment modification. The conformality is over 95% for 20 micrometer deep trenches and maintains a conformality greater than 85% in 50 micrometer deep trenches. This compares with 75% conformality which is considered excellent for 20 micrometer trench refills obtained using previous LPCVD TEOS processing. The process is shown to have benefits in conformality, breakdown voltage, and stress over standard trench fill processes including Ozone TEOS. The densification of the TEOS film has been optimized for electrical parameters using CV and IV techniques, while XPS, FTIR and spectroscopic ellipsometry are used for physical characterization. Stress is a very important parameter for micro-machining and the conformal TEOS has a film stress which is tensile 30 - 40 MPa as deposited and compressive 100 MPa after densification. The breakdown voltage has been measured at 8.5 MV/cm compared to 7.5 - 9 MV/cm for a typical densified TEOS film and the refractive index is 1.456 compared to 1.465 for a thermal oxide. Analog Devices Belfast is part of the Micro-machined Products division and provides SOI and customized SOI for the MEMs and IC market.

© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Paul McCann ; Kumar Somasundram ; Stephen Byrne and Andrew Nevin
"Conformal deposition of LPCVD TEOS", Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, 329 (September 28, 2001); doi:10.1117/12.442963; http://dx.doi.org/10.1117/12.442963


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