Reliable integration of piezoelectric lead zirconate titanate with MEMS fabrication processes

Steven J. Gross; Qingqi Zhang; Srinivas Tadigadapa; Susan Trolier-McKinstry; Thomas N. Jackson; Frank T. Djuth

doi:10.1117/12.442988

2 October 2001 Reliable integration of piezoelectric lead zirconate titanate with MEMS fabrication processes

Steven J. Gross, Qingqi Zhang, Srinivas Tadigadapa, Susan Trolier-McKinstry, Thomas N. Jackson, Frank T. Djuth

Proceedings Volume 4558, Reliability, Testing, and Characterization of MEMS/MOEMS; (2001) https://doi.org/10.1117/12.442988
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States

Abstract

The high piezoelectric effect of lead zirconate titanate (PZT) films enables improved performance in microelectromechanical systems (MEMS). The material's reliable integration into current and mainstream MEMS microfabrication processes is then of great interest. In this paper we report on high reliability fabrication processes that can be used for producing PZT based MEMS devices. Pattern definition and release of PZT, low stress silicon nitride, platinum, and/or zirconia structures via wet and dry chemical etching and ion beam etching, including their affects on the piezoelectric properties of PZT are reported. Ion beam etching results in appreciable imprint in the polarization - electric field hysteresis loop of the PZT, which can be ameliorated by annealing in ambient air at 450 degree(s)C. PZT on silicon nitride cantilever structures were defined and released by dry xenon difluoride silicon sacrificial etching. The advantages and difficulties of wet release etching versus xenon difluoride are also presented.

Citation Download Citation

Steven J. Gross, Qingqi Zhang, Srinivas Tadigadapa, Susan Trolier-McKinstry, Thomas N. Jackson, and Frank T. Djuth "Reliable integration of piezoelectric lead zirconate titanate with MEMS fabrication processes", Proc. SPIE 4558, Reliability, Testing, and Characterization of MEMS/MOEMS, (2 October 2001); https://doi.org/10.1117/12.442988

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