Paper
15 May 2001 Two-dimensional active pixel InGaAs focal plane arrays
Quiesup Kim, Michael J. Lange, Christopher J. Wrigley, Thomas J. Cunningham, Bedabrata Pain
Author Affiliations +
Abstract
Switching and amplifying characteristics of a newly developed 2D InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors for low leakage, low power and fast control of circuit signal amplifying, buffering, selection and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with a silicon multiplexer, and in addition, allows the sensor to be front illuminated, making it sensitive to visible as well as near IR signal radiation. Adapting the existing 1.55 micrometers fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band applications near room temperature, for use in atmospheric gas sensing in space and target identification on earth. In this paper, 4 by 4 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit in preparation for 2D InGaAs active pixel sensor arrays for applications in multifunctional, transportable shipboard surveillance, night vision and emission spectroscopy.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Quiesup Kim, Michael J. Lange, Christopher J. Wrigley, Thomas J. Cunningham, and Bedabrata Pain "Two-dimensional active pixel InGaAs focal plane arrays", Proc. SPIE 4277, Integrated Optics Devices V, (15 May 2001); https://doi.org/10.1117/12.426798
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CITATIONS
Cited by 2 scholarly publications and 2 patents.
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KEYWORDS
Sensors

Indium gallium arsenide

Field effect transistors

Staring arrays

Silicon

Active sensors

Switching

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