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Proceedings Article

Growth, crystallization, and room temperature photoluminescence of Er2O3 thin films

[+] Author Affiliations
Kevin M. Chen, Sajan Saini, Michal Lipson, Xiaoman Duan, Lionel C. Kimerling

Massachusetts Institute of Technology (USA)

Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, 168 (April 27, 2001); doi:10.1117/12.424773
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From Conference Volume 4282

  • Rare-Earth-Doped Materials and Devices V
  • Shibin Jiang
  • San Jose, CA | January 20, 2001

abstract

Room temperature photoluminescence (RT PL) has been obtained from Er2O3 thin films fabricated via reactive sputtering of Er metal in Ar/O2 and subsequently annealed. Upon annealing, the PL spectra develop maxima at 1549 nm and 1541 nm for films treated at 650 degrees C and 1020 degrees C, respectively. Crystallization at high temperature results in RT PL and a lifetime of approximately 10 ms at 4K.

© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Kevin M. Chen ; Sajan Saini ; Michal Lipson ; Xiaoman Duan and Lionel C. Kimerling
"Growth, crystallization, and room temperature photoluminescence of Er2O3 thin films", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, 168 (April 27, 2001); doi:10.1117/12.424773; http://dx.doi.org/10.1117/12.424773


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