Optical investigation of InGaAsN structures for photodetector applications

Jean Benoit Heroux; Xiaoping Yang; B. Turk; Wen I. Wang

doi:10.1117/12.429411

12 June 2001 Optical investigation of InGaAsN structures for photodetector applications

Jean Benoit Heroux, Xiaoping Yang, B. Turk, Wen I. Wang

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429411
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The optical properties of InGaAsN structures for the fabrication of photodetectors are investigated. An expression for the bulk bandgap as a function of the nitrogen fraction is obtained from x-ray diffraction, photoreflectance and photoluminescence measurements. Optical absorption of undoped MQW structures show that the cutoff wavelength is extended due to the presence of nitrogen. A functioning heterojunction phototransistor was fabricated. Photocurrent spectra show that a responsivity higher than 1.5 A/W is obtained with a cutoff wavelength of 1.16 micrometers . I-V measurements under different light levels show that a peak gain of 5 is obtained with a collector current of 260 (mu) A and a dark current lower than 2 nA with a 10V bias.

Citation Download Citation

Jean Benoit Heroux, Xiaoping Yang, B. Turk, and Wen I. Wang "Optical investigation of InGaAsN structures for photodetector applications", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429411

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