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Proceedings Article

Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics

[+] Author Affiliations
Hsin-Chiao Luan, Meghan A. Kerner, Lionel C. Kimerling

Massachusetts Institute of Technology (USA)

Lorenzo Colace, Gianlorenzo Masini, Gaetano Assanto

Univ. degli Studi di Roma Tre (Italy)

Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, 118 (May 18, 2001); doi:10.1117/12.426929
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From Conference Volume 4293

  • Silicon-based and Hybrid Optoelectronics III
  • David J. Robbins; John A. Trezza; Ghassan E. Jabbour
  • San Jose, CA | January 20, 2001

abstract

We present a technology for the integration of high performance near-infrared Ge P-I-N photodetectors on Si for Si microphotonics. High quality Ge epilayers were grown on Si by a two-step ultrahigh-vacuum / chemical-vapor-deposition (UHV/CVD) process. Two-step UHV/CVD allows the epitaxial growth of Ge on Si without islanding. Threading-dislocations in Ge epilayers were reduced by cyclic thermal annealing. The reduction of threading-dislocations can be understood in terms of thermal stress induced dislocation glide and reactions. We found that sessile threading-dislocations are not permanent and can be removed.

© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Hsin-Chiao Luan ; Meghan A. Kerner ; Lionel C. Kimerling ; Lorenzo Colace ; Gianlorenzo Masini, et al.
"Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, 118 (May 18, 2001); doi:10.1117/12.426929; http://dx.doi.org/10.1117/12.426929


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