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Proceedings Article

p-i-n germanium photodetectors integrated on silicon substrates

[+] Author Affiliations
Lorenzo Colace, Gianlorenzo Masini, Gaetano Assanto

Univ. degli Studi di Roma Tre (Italy)

Hsin-Chiao Luan, Lionel C. Kimerling

Massachusetts Institute of Technology (USA)

Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, 123 (May 18, 2001); doi:10.1117/12.426930
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From Conference Volume 4293

  • Silicon-based and Hybrid Optoelectronics III
  • David J. Robbins; John A. Trezza; Ghassan E. Jabbour
  • San Jose, CA | January 20, 2001

abstract

We report on the integration of Ge p-i-n heterojunction photodiodes on Si substrates. The crucial role of interface defects at the Ge/Si interface on the performance of photodetectors is analyzed and taken into account in the design of the devices. We have designed and fabricated high performance p-i-n Ge photodiodes for the near infrared. Pure Ge is grown by ultra-high-vacuum CVD followed by a cyclic thermal annealing and ion implantation. Devices are fabricated using standard photolithography. The photodiodes exhibit maximum responsivity of 0.8 A/W at 1.3 micrometers and 0.7 A/W at 1.55 micrometers , reverse dark currents in the 20 mA/cm2 range at 1V and response times as short as 520 ps. Our devices are the first p-i-n Ge on Si photodetectors fabricated by CVD and exhibit high performances for a wide range of applications.

© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Lorenzo Colace ; Gianlorenzo Masini ; Gaetano Assanto ; Hsin-Chiao Luan and Lionel C. Kimerling
"p-i-n germanium photodetectors integrated on silicon substrates", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, 123 (May 18, 2001); doi:10.1117/12.426930; http://dx.doi.org/10.1117/12.426930


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