Polycrystalline silicon thin film transistor technology for flexible large-area electronics

YehJiun Tung; Paul G. Carey; Patrick M. Smith; Steven D. Theiss; Paul Wickboldt; Xiaofan Meng; Robert E. Weiss; Gary A. Davis; Verle W. Aebi; Tsu-Jae King

doi:10.1117/12.424862

30 April 2001 Polycrystalline silicon thin film transistor technology for flexible large-area electronics

YehJiun Tung, Paul G. Carey, Patrick M. Smith, Steven D. Theiss, Paul Wickboldt, Xiaofan Meng, Robert E. Weiss, Gary A. Davis, Verle W. Aebi, Tsu-Jae King

Author Affiliations +

Proceedings Volume 4295, Flat Panel Display Technology and Display Metrology II; (2001) https://doi.org/10.1117/12.424862
Event: Photonics West 2001 - Electronic Imaging, 2001, San Jose, CA, United States

Abstract

The burgeoning number of mobile consumer electronics has created a demand for lightweight, low-cost, portable displays. The development of a polycrystalline-silicon thin film transistor (TFT) technology compatible with plastic substrates will enable displays and large-area electronics that are low power, rugged and flexible. Significant challenges exist in the development of a polysilicon TFT fabrication process that is compatible with plastic substrates, since plastic has a much lower thermal budget than glass substrates. In general, superior polysilicon TFT performance is achieved with higher temperature fabrication processes because the quality of the polysilicon and gate- dielectric films are very sensitive to process temperature. In this work, an ultra-low-temperature process for fabricating high-quality self-aligned polysilicon TFTs on flexible plastic substrates is described. All fabrication steps are performed at or below 100 degrees C. Polysilicon is formed by crystallizing sputtered amorphous Si films using a XeCl excimer laser with a pulse duration of approximately 35 ns. Gate oxide deposition is formed using high-density plasma CVD, and metal films are deposited by sputtering.

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YehJiun Tung, Paul G. Carey, Patrick M. Smith, Steven D. Theiss, Paul Wickboldt, Xiaofan Meng, Robert E. Weiss, Gary A. Davis, Verle W. Aebi, and Tsu-Jae King "Polycrystalline silicon thin film transistor technology for flexible large-area electronics", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); https://doi.org/10.1117/12.424862

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KEYWORDS

Plasma enhanced chemical vapor deposition

Plasma

Glasses

Oxides

Excimer lasers

Transistors

Aluminum

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