Design of multilayer optoelectronic devices

Jurana Borgulova; Frantisek Uherek; Jaroslav Kovac; Alexander Satka

doi:10.1117/12.353064

14 July 1999 Design of multilayer optoelectronic devices

Jurana Borgulova, Frantisek Uherek, Jaroslav Kovac, Alexander Satka

Proceedings Volume 3820, 11th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics; (1999) https://doi.org/10.1117/12.353064
Event: Eleventh Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 1998, Stara Lesna, Slovakia

Abstract

In this paper we report on the computer design of multilayer optoelectronic devices. The software based on the optical transfer matrix method was successfully applied for distributed Bragg reflector and resonant cavity enhanced PIN photodiode design. The designed structures based on the InP/InAlGaAs and InP/InGaAs/InAlGaAs material systems were prepared by low-pressure MOVPE method. The simulated and experimental reflectivity and photoresponse spectra of the designed and prepared structures are presented. A very good agreement between experimental and simulated results has been obtained. Our results show that the computer design based on the transfer matrix method is a useful and effective tool for the design of advanced multilayer optoelectronic structures.

Citation Download Citation

Jurana Borgulova, Frantisek Uherek, Jaroslav Kovac, and Alexander Satka "Design of multilayer optoelectronic devices", Proc. SPIE 3820, 11th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, (14 July 1999); https://doi.org/10.1117/12.353064

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