Analysis of reticle deformation, reduction ratio, and MEEF of future optical lithography

Kenichi Kotoku; Koichi Mikami; Ryuichi Ebinuma; Yuichi Yamada; Yuan Zhang

doi:10.1117/12.392069

19 July 2000 Analysis of reticle deformation, reduction ratio, and MEEF of future optical lithography

Kenichi Kotoku, Koichi Mikami, Ryuichi Ebinuma, Yuichi Yamada, Yuan Zhang

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392069
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

As a result of aggressive line width shrinking of semiconductor devices in the recent years, the requirements for advanced reticles are getting more and more stringent. Therefore, it is beneficial to consider increasing the reduction ratio of projection optics in order to relax the reticle tolerances. This paper discusses quantitatively the reticle, CD, DOF and overlay accuracy requirement listed in the 1999 International Technology Roadmap for Semiconductor (ITRS) roadmap. Our simulation suggests mask drawing accuracy needs to be further improved for better CD control accuracy. Increasing reduction ratio to 6x is also another way to meet the line width requirement. Productively enhancement with 6x reduction in comparison to 4x reduction ratio is also shown.

Citation Download Citation

Kenichi Kotoku, Koichi Mikami, Ryuichi Ebinuma, Yuichi Yamada, and Yuan Zhang "Analysis of reticle deformation, reduction ratio, and MEEF of future optical lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392069

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