High-efficiency silicon optoelectronic modulator based on a Bragg mirror and integrated in a low-loss silicon-on-insulator waveguide

Andrea Irace; Giuseppe Coppola; Mario Iodice; Antonello Cutolo

doi:10.1117/12.371242

26 November 1999 High-efficiency silicon optoelectronic modulator based on a Bragg mirror and integrated in a low-loss silicon-on-insulator waveguide

Andrea Irace, Giuseppe Coppola, Mario Iodice, Antonello Cutolo

Author Affiliations +

Proceedings Volume 3847, Optical Devices for Fiber Communication; (1999) https://doi.org/10.1117/12.371242
Event: Photonics East '99, 1999, Boston, MA, United States

Abstract

In this paper we propose a silicon optoelectronic modulator based on the Plasma Dispersion Effect used in conjunction with a Distributed Bragg Reflector which converts the phase shift induced by the free carriers injected by a P-i-N diode into variation of its reflectivity. The device is integrated in a low-loss Silicon-On-Insulator waveguide. With respect to a previous paper [A. Cutolo et al., Appl. Phys. Lett., 71 (2), 1997] we suggest an inversion of the driving scheme; we propose to tune the Bragg mirror in the ON state, when the light passes through the mirror unchanged, and then to inject the electron-hole plasma to put the mirror in the total reflection configuration and therefore to switch the light off. In this case the two plasma-induced optical effects, that is the variation of refractive index and absorption coefficient, are concurrent and both contributing to an efficient switching of the light. This new driving scheme allows to reach better performances in terms of modulation depth efficiency; in fact we show how, in this case, a 100% modulation depth is achieved. An exhaustive description of the optical structure and its guiding properties, together with the analysis of the electrical behavior of the modulator are given. Moreover, we show how dissipated power is also reduced allowing us to design a highly optimized version of the modulator. Finally, a comparison with other interferometric structures is given and it is shown how this kind of modulator results very attractive in terms of dissipated power and reduced area occupied on chip.

Citation Download Citation

Andrea Irace, Giuseppe Coppola, Mario Iodice, and Antonello Cutolo "High-efficiency silicon optoelectronic modulator based on a Bragg mirror and integrated in a low-loss silicon-on-insulator waveguide", Proc. SPIE 3847, Optical Devices for Fiber Communication, (26 November 1999); https://doi.org/10.1117/12.371242

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available