Phase-change material for use in rewritable dual-layer optical disk

Noboru Yamada; Rie Kojima; Mayumi Uno; Tetsuya Akiyama; Hideki Kitaura; Kenji Narumi; Kenichi Nishiuchi

doi:10.1117/12.453428

10 January 2002 Phase-change material for use in rewritable dual-layer optical disk

Noboru Yamada, Rie Kojima, Mayumi Uno, Tetsuya Akiyama, Hideki Kitaura, Kenji Narumi, Kenichi Nishiuchi

Proceedings Volume 4342, Optical Data Storage 2001; (2002) https://doi.org/10.1117/12.453428
Event: Optical Data Storage, 2001, Santa Fe, NM, United States

Abstract

A thin film of Sn-doped and GeTe-rich GeTe-Sb₂Te₃ shows characteristics that make it suitable for use in rewritable dual-layer optical disks employing a violet laser. By increasing the GeTe component form Ge₂Sb₂Te₅ to Ge₄Sb₂Te₇, and Ge₈Sb₂Te₁₁, optical changes were increased. By substituting Sn for a proposition of Ge in these compositions, crystallization rates are greatly increased and even a 5 nm-thick film showed a very short laser-crystallization time of less than 50 ns. The material film was successfully applied to Layer 0 of rewritable dual-layer disk: capacity of 27 GB and a 33 Mbps data transfer rate were confirmed for a disk using a conventional 0.6 mm substrate, and 45 GB capacity and the same data transfer rate were obtained for another disk using thin cover layer 0.1 mm thick.

Citation Download Citation

Noboru Yamada, Rie Kojima, Mayumi Uno, Tetsuya Akiyama, Hideki Kitaura, Kenji Narumi, and Kenichi Nishiuchi "Phase-change material for use in rewritable dual-layer optical disk", Proc. SPIE 4342, Optical Data Storage 2001, (10 January 2002); https://doi.org/10.1117/12.453428

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