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Proceedings Article

Scatterometry for shallow trench isolation (STI) process metrology

[+] Author Affiliations
Christopher J. Raymond, Michael E. Littau

Accent Optical Technologies (USA)

Richard J. Markle, Matthew A. Purdy

Advanced Micro Devices, Inc. (USA)

Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, 716 (August 22, 2001); doi:10.1117/12.436798
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From Conference Volume 4344

  • Metrology, Inspection, and Process Control for Microlithography XV
  • Neal T. Sullivan
  • Santa Clara, CA | February 25, 2001

abstract

Scatterometry is a non-destructive optical metrology based on the analysis of light scattered form a periodic sample. In this research angular scatterometry measurements were performed on three wafers processed using shallow trench isolation (STI) technology. The periodic features that were measured on these wafers were composite etched gratings comprised of SiN on oxide on Si. The wafers were processed at three different etch times in order to generate different etch depths (shallow, nominal and deep). It was at this point in the process that the scatterometry measurements were performed. The scatterometry model was comprised of four parameters: Si thickness, SiN thickness, linewidth and sidewall angle. For comparison purposes measurements were also performed using a critical dimension scanning electron microscope (CD-SEM), a cross-section SEM and an atomic force microscope (AFM). The results show good agreement between the scatterometry measurements and the other technologies.

© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Christopher J. Raymond ; Michael E. Littau ; Richard J. Markle and Matthew A. Purdy
"Scatterometry for shallow trench isolation (STI) process metrology", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, 716 (August 22, 2001); doi:10.1117/12.436798; http://dx.doi.org/10.1117/12.436798


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