Paper
25 February 2000 Photoinduced growth of dielectrics with excimer lamps
Ian W. Boyd, Jun-Ying Zhang
Author Affiliations +
Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378167
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Abstract
Applications of photo-induced processes have over the years become essential technologies in several important industrial sectors. In this paper, the principles and properties of novel vacuum UV (VUV) and UV radiation generated by novel excimer sources are discussed. Compared with conventional sources, these excimers lamps offer narrow-band radiation at various wavelengths form 108-354 nm and over large areas. Since excimer complexes have no stable ground states self-absorption of the emitted radiation in the discharge is avoided. As a consequence, high efficiencies at high power densities can be achieved.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ian W. Boyd and Jun-Ying Zhang "Photoinduced growth of dielectrics with excimer lamps", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378167
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Cited by 5 scholarly publications.
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KEYWORDS
Excimers

Lamps

Ultraviolet radiation

Dielectrics

Silicon

Annealing

Silicon films

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