Reduction of dose effects due to the transient absorption in fused silica at 193 nm

Gregory J. Kivenzor; Richard J. Guerra

doi:10.1117/12.435739

14 September 2001 Reduction of dose effects due to the transient absorption in fused silica at 193 nm

Gregory J. Kivenzor, Richard J. Guerra

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435739
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

This paper presents analysis, modeling, and test results of a 193 nm systems designed to minimize the dose effects due to the transient absorption (TA) in fused silica at 193 nm exposure. Fused silica is a material widely used to build optical systems for DUV lithography. Different types of fused silica have been subjected to thorough theoretical examination and testing in the leading laboratories of the world -- IBM Almaden Research Center, MIT Lincoln Labs, Laser-Laboratorium Gottingen and others. One of the most important effects discovered in some types of fused silica, was the TA demonstrated at 193 nm. Pulsed laser illumination may cause a substantial temporary decrease of the sample transmission. After the laser is shut off, the transmission recovers approximately to the initial value. Research results published over the last decade demonstrated that not only the magnitude of TA but also the time constant are functions of fluence. These transients can cause substantial dose variations, making the exposure process unstable and reducing the process yield. SVG manufactures high precision tools for critical-layers lithography where dose stability is crucial. Therefore, the TA was modeled and tested at the system level (laser illuminator and projection optics) to predict behavior of the optical elements in different exposure regimes. This paper presents the theoretical description of the behavior, results of computer simulation and testing for a multi-element system. Criteria of the systems engineering decisions allowing minimization of the TA impact on the dose control are discussed in the conclusion.

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Gregory J. Kivenzor and Richard J. Guerra "Reduction of dose effects due to the transient absorption in fused silica at 193 nm", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435739

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KEYWORDS

Absorption

Silica

Optical components

Semiconducting wafers

Lithography

Wafer-level optics

Lithium

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