Recent LLNL experiments reported elsewhere at this conference explored the pulse length dependence of 351 nm bulk damage incidence in DKDP. The results found are consistent, in part, with a model in which a distribution of small bulk initiators is assumed to exist in the crystal, and the damage threshold is determined by reaching a critical temperature. The observed pulse length dependence can be explained as being set by the most probable defect capable of causing damage at a given pulse length. Analysis of obscuration in side illuminated images of the damaged region yields estimates of the damage site distributions that are in reasonable agreement with the distributions experimentally directly estimated.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.