Charged-particle-beam-induced processes and their applicability to mask repair for next-generation lithographies

Hans W. P. Koops

doi:10.1117/12.425093

9 April 2001 Charged-particle-beam-induced processes and their applicability to mask repair for next-generation lithographies

Hans W. P. Koops

Author Affiliations +

Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425093
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany

Abstract

A comparison of the achievements of charged particle beam induced processes as published is evaluated to judge on the applicability of this technology for Next Generation Lithography mask repair. Methods for repair of defects of different types on different masks are reviewed. This compares the achievements of ion beam technologies as well as of electron beam technologies. With these techniques the properties of the deposited materials for open defect repair can be selected using different precursors, currents, temperatures and voltages for the deposition process. Very high resolution is achievable. For opaque defects the etching and trimming of a surplus of absorber or scattering material with electrons or ions is compared.

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Hans W. P. Koops "Charged-particle-beam-induced processes and their applicability to mask repair for next-generation lithographies", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425093

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