A new process for low-temperature crystallization of amorphous Si (a-Si) films, metal-induced lateral crystallization (MILC), was developed. In our work, Al metal was adopted for the purpose of enhancing the crystallization of a-Si. The a-Si films right under the Al films were crystallized to the poly-Si films at the initial stage of annealing. These crystalline seeds were then grown laterally into Al-free area without further nucleation (lateral crystallization), thus obtaining large-grained poly-Si films with no metal contamination. The crystallinity was examined by Raman spectroscopy and X-ray diffraction. The results show that during MILC, the lowest temperature of Al induced lateral crystallization is about 300 degree(s)C and the crystallinity was enhanced while the temperature increased. This low temperature contamination-free lateral crystallization phenomenon may be applicable to the low temperature fabrication of poly-Si TFTs on the glass substrates.
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