Paper
30 December 1999 Comparison study of mask error effects for various mask-making processes
Tae-Seung Eom, Ikboum Hur, Youngmo Koo, Ki-Ho Baik, Il-Hyun Choi, Do Yun Kim, Chul Shin
Author Affiliations +
Abstract
Photomask is one of the most critical technologies for lithography. Optical lithography at resolution limit is a non- linear pattern transfer process. OPC (Optical Proximity Correction) technology has been used in the semiconductor industry for controlling the shape of pattern, and eliminating the line shortening and corner rounding effects for submicron feature. Therefore, OPC technology is an approach for improving lithography performance that has been received much attention recently. We investigated the lithographic performance in terms of EL (Exposure Latitude), DOF (Depth of Focus), and mask error effects for various mask fabrication. It was observed that mask error gave severe influence on the lithographic performance and the OPC simulation error also strongly depended upon the mask quality.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tae-Seung Eom, Ikboum Hur, Youngmo Koo, Ki-Ho Baik, Il-Hyun Choi, Do Yun Kim, and Chul Shin "Comparison study of mask error effects for various mask-making processes", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373369
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Optical proximity correction

Lithography

Mask making

Dry etching

Head

Electroluminescence

Back to Top