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Proceedings Article

High-aspect-ratio two-dimensional silicon subwavelength gratings fabricated by fast atom beam etching

[+] Author Affiliations
Yoshiaki Kanamori, Minoru Sasaki, Kazuhiro Hane

Tohoku Univ. (Japan)

Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, 345 (August 30, 1999); doi:10.1117/12.361239
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From Conference Volume 3874

  • Micromachining and Microfabrication Process Technology V
  • James H. Smith; Jean Michel Karam
  • Santa Clara, CA | September 20, 1999

abstract

We fabricated 2D subwavelength structured (SWS) surface on crystal silicon and SiO2 substrates. The SWS surface patterns were generated by electron beam lithography and etched by SF6 fast atom beam. In the case of the silicon SWS surface with the period of 150nm, the grating had conical profile and the groove was approximately 350nm deep. The reflectivity was examined at the wavelengths between 200nm and 2500nm. At 400nm, the reflectivity decreased to 0.5 percent from 54.7 percent of the silicon substrate. The reflectivity was also examined for the incident angel with He-Ne laser light. Thus, it was shown that the silicon SWS surface prevented the reflection in the wide ranges of wavelength and incident angle. We also fabricated the hole type SWS surface and the column type SWS surface on silicon substrates. In both types, the grating period was 200nm and the grooves were approximately 275nm deep. Moreover, the SiO2 SWS surface with the period of 150nm was fabricated and the reflectivity was examined at the wavelengths between 200nm and 2500nm.

© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Yoshiaki Kanamori ; Minoru Sasaki and Kazuhiro Hane
"High-aspect-ratio two-dimensional silicon subwavelength gratings fabricated by fast atom beam etching", Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, 345 (August 30, 1999); doi:10.1117/12.361239; http://dx.doi.org/10.1117/12.361239


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