Ultrahigh-density recording based on third-order optical nonlinearities

Ailun Rong; Deyin Huang; Qiang Chen

doi:10.1117/12.416844

7 February 2001 Ultrahigh-density recording based on third-order optical nonlinearities

Ailun Rong, Deyin Huang, Qiang Chen

Proceedings Volume 4085, Fifth International Symposium on Optical Storage (ISOS 2000); (2001) https://doi.org/10.1117/12.416844
Event: Fifth International Symposium on Optical Storage (IS0S 2000), 2000, Shanghai, China

Abstract

High density and high data rate are two key points in the development of optical data storage. The aim of this contribution is to report the ultrahigh density recording based on third-order non-linearities (TONL). Studies on the laser beam intensity-dependent refractive-index changes of TONL media, either organic or inorganic, were carried out on the basis of classical electromagnetic field theory. The graphic solutions of the theory and the experimental evidence indicate that materials with large susceptibilities, (chi) ⁽³), and ultrafast response due to dispersive-NL or saturated absorption-NL have good optical switching properties which can be described by an- or multi-optical hysteresis loops and used as the mask layers of super-RENS (Super- resolution near-field structure). On the other hand, the numerical solutions of the wave functions give the third-order nonlinear optical dynamics of direct-gap or indirect-gap semiconductors due to band-filling effect or photon-excited electron-hole generation and recombination processes. Based on TONL, an optimized structure for ultrahigh density recording can be designed. Using miliwatts in power, picosecond in response and having the spot size in the range of n (1 approximately 5) yields 10 n nanometer, these well-designed media are now physically possible in practice.

Citation Download Citation

Ailun Rong, Deyin Huang, and Qiang Chen "Ultrahigh-density recording based on third-order optical nonlinearities", Proc. SPIE 4085, Fifth International Symposium on Optical Storage (ISOS 2000), (7 February 2001); https://doi.org/10.1117/12.416844

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Optical switching

Antimony

Numerical analysis

Near field scanning optical microscopy

Nonlinear optics

Refractive index

Semiconductors

Show All Keywords

Keywords/Phrases

Search In:

Publication Years