Si growth on the Si(III)-B surface phase depending on the type of surface phase formation and initial boron coverage

A. P. Shaporenko; V. V. Korobtsov; V. V. Balashev

doi:10.1117/12.408407

29 November 2000 Si growth on the Si(III)3x3R30-B surface phase depending on the type of surface phase formation and initial boron coverage

A. P. Shaporenko, V. V. Korobtsov, V. V. Balashev

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408407
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Reflection high energy electron diffusion (RHEED) is used to study the Si growth on a Si(111)(root)3X(root)3-B surface, prepared by various procedures. The analysis of RHEED patterns, specular beam intensity oscillations and dependencies of specular beam intensity on incidence angle (rocking curves), shows that the Si growth mode and epilayers quality depend on both an initial boron coverage and the way of (root)3X(root)3-B surface phase formation. Increase of transition temperature, at which Si growth mode converts from layer-by-layer to step-flow growth mode, is discussed in terms of the theory of surfactant-mediated growth on semiconductor surfaces.

Citation Download Citation

A. P. Shaporenko, V. V. Korobtsov, and V. V. Balashev "Si growth on the Si(III)3x3R30-B surface phase depending on the type of surface phase formation and initial boron coverage", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408407

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