Dislocation evaluation of GaN etched by photoenhanced KOH solution by atomic force microscopy

Zhibiao Zhao; Ming Qi; Aizhen Li

doi:10.1117/12.408409

29 November 2000 Dislocation evaluation of GaN etched by photoenhanced KOH solution by atomic force microscopy

Zhibiao Zhao, Ming Qi, Aizhen Li

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408409
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Atomic force microscopy (AFM) was used to investigate the surface topography of GaN grown by radio frequency plasma assisted molecule beam epitaxy and etched with a 1.0 M KOH solution in a photoenhanced process. Whiskers were observed in AFM photo and correlated with dislocations. Dislocations density was evaluated from whiskers density, and confirmed by x-ray 2D triple axis mapping estimated results.

Citation Download Citation

Zhibiao Zhao, Ming Qi, and Aizhen Li "Dislocation evaluation of GaN etched by photoenhanced KOH solution by atomic force microscopy", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408409

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