Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix

Zhixun Ma; Xianbo Liao; Weimin Zheng; Jian Yu; Junhao Chu

doi:10.1117/12.408447

29 November 2000 Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix

Zhixun Ma, Xianbo Liao, Weimin Zheng, Jian Yu, Junhao Chu

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408447
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Structural dependence on annealing of a-SiO_x:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513 - 519 cm^-1 after 1170 degree(s)C annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3 - 10 nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980 cm^-1 of Si-O-Si stretching vibration at 1085 cm^-1 in infrared spectra imply that except that SiO₂ phase, there is silicon sub-oxide phase in the films annealed at 1170 degree(s)C. This sub-oxide phase is located at the interface between Si Crystallites and SiO₂, and thus support the shell model for the mixed structures of Si grains and SiO₂ matrix.

Citation Download Citation

Zhixun Ma, Xianbo Liao, Weimin Zheng, Jian Yu, and Junhao Chu "Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408447

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