Paper
29 November 2000 Optical properties of MBE GaAs films on SrTiO3 (100) substrates
P. P. Chen, Wei Lu, Y. D. Chen, Z.L. Miao, Z.F. Li, Xue Chu Shen, Q. X. Zhao
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408348
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
This paper reports the molecular beam epitaxy growth of the GaAs films on the SrTiO3 (100) substrates. The microstructures of the films are characterized by XRD and SEM. SEM results show the different shapes of islands at different thickness. Micro-Raman studies show that the crystal lattice vibrations of the GaAs films are similar to that of GaAs bulk material. Using the photo modulated reflectance spectroscopy and photoluminescence measurement techniques, optical transitions close to GaAs band gap energy are observed, and large blue shifts are observed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. P. Chen, Wei Lu, Y. D. Chen, Z.L. Miao, Z.F. Li, Xue Chu Shen, and Q. X. Zhao "Optical properties of MBE GaAs films on SrTiO3 (100) substrates", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408348
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KEYWORDS
Gallium arsenide

Crystals

Phonons

Optical properties

Raman spectroscopy

Scanning electron microscopy

Temperature metrology

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