Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy

[+] Author Affiliations
Klaus H. Herrmann

Kuwait Univ. (Kuwait)

Jens W. Tomm

Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)

Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2 (November 4, 1999); doi:10.1117/12.368330
Text Size: A A A
From Conference Volume 3890

  • Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
  • Fiodor F. Sizov
  • Kiev, Ukraine | September 28, 1998

abstract

GaAs/GaAlAs quantum well (QW) structures for graded index (GRIN) near IR injection lasers have been studied by polarization dependent photocurrent spectroscopy in the spectral region of QW transitions and in a wide range of temperatures 20 K <EQ T <EQ 375 K. The photocurrent has been measured under short-circuit conditions for the electric vector of the light wave parallel to the plane of the waveguide (TE) as well as perpendicular to the plane of the waveguide (TM). Distinct edges are observed in the quantum efficiency spectra and attributed to the onset of transitions form the heavy hole to electron and light hole to electron subbands, respectively. The observation of different spectral features in TE and TM spectra is discussed in terms of selection rules and mode coupling into the waveguide. Edge positions are compared with calculations of the well states. Coulomb interaction manifests itself in the occurrence of n equals 1 excitonic lines at the hh1-e1, 1h1-e1 and 1h2-e2 subband edges. Temperature dependent measurements indicate mechanisms for carrier escape form the QW. At intermediate temperatures the photocurrent is thermally activated, an explanation in terms of thermionic emission theory is given, and the justification of assuming thermalized non-equilibrium carriers is discussed for different transitions. The observed activation energy is correlated with the energy scale in the QW. At low temperatures the temperature dependence is weak, carrier escape is explained by tunnelling. At the highest temperatures the quantum efficiency decreases again, this is attributed to the growing influence of recombination.

© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Klaus H. Herrmann and Jens W. Tomm
"Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2 (November 4, 1999); doi:10.1117/12.368330; http://dx.doi.org/10.1117/12.368330


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.