High-precision metal masking for multiple-wavelength laser diode fabrication using single-step-ion-implantation-induced quantum well intermixing

Vincent Aimez; Jacques Beauvais; Jean Beerens; Boon Siew Ooi

doi:10.1117/12.406459

15 December 2000 High-precision metal masking for multiple-wavelength laser diode fabrication using single-step-ion-implantation-induced quantum well intermixing

Vincent Aimez, Jacques Beauvais, Jean Beerens, Boon Siew Ooi

Author Affiliations +

Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406459
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

In this paper we report the development of a new and versatile ion implantation mask system which takes advantage of the high precision offered by recent deposition methods. A stack of alternate layers of two different materials which can be selectively etched is first deposited on the sample. Selective etching is then performed to remove a given number of layers from the stack in the various region of the sample. Owing to a high etching selectivity between the two materials, the thickness of the mask can be fixed very precisely in each region. During ion implantation, a different amount of ions will pass through the mask to reach the sample, according to mask thickness over each region. This method therefore provides a way to achieve a spatial control over the implantation dose, in a single implantation step. Thermal annealing can then be performed to induce quantum well intermixing in the underlying heterostructure, which brings about a blueshift of the emission wavelength. The results obtained with our method, which makes use of low energy ion implantation, for the fabrication ofsingle step graded blueshifting of InP/InGaAs/InGaAsP integrated laser heterostructures are presented. We also present a study of pairs of materials suitable for the mask fabrication, as well as the results of numerical simulations to determine the appropriate thickness ofthe mask layers.

Citation Download Citation

Vincent Aimez, Jacques Beauvais, Jean Beerens, and Boon Siew Ooi "High-precision metal masking for multiple-wavelength laser diode fabrication using single-step-ion-implantation-induced quantum well intermixing", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406459

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