Nanometer x-ray lithography

Frank T. Hartley; Chantal G. Khan Malek

doi:10.1117/12.368464

8 October 1999 Nanometer x-ray lithography

Proceedings Volume 3893, Design, Characterization, and Packaging for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.368464
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

New developments for x-ray nanomachining include pattern transfer onto non-planar surfaces coated with electrodeposited resists using synchrotron radiation x-rays through extremely high-resolution mask made by chemically assisted focused ion beam lithography. Standard UV photolithographic processes cannot maintain sub-micron definitions over large variation in feature topography. The ability of x-ray printing to pattern thin or thick layers of photoresist with high resolution on non-planar surfaces of large and complex topographies with limited diffraction and scattering effects and no substrate reflection is known and can be exploited for patterning microsystems with non-planar 3D geometries as well as multisided and multilayered substrates. Thin conformal coatings of electro-deposited positive and negative tone photoresist have been shown to be x-ray sensitive and accommodate sub-micro pattern transfer over surface of extreme topographical variations. Chemically assisted focused ion beam selective anisotropic erosion was used to fabricate x-ray masks directly. Masks with feature sizes less than 20 nm through 7 microns of gold were made on bulk silicon substrates and x-ray mask membranes. The technique is also applicable to other high density materials. Such masks enable the primary and secondary patterning and/or 3D machining of Nano-Electro-Mechanical Systems over large depths or complex relief and the patterning of large surface areas with sub-optically dimensioned features.

Citation Download Citation

Frank T. Hartley and Chantal G. Khan Malek "Nanometer x-ray lithography", Proc. SPIE 3893, Design, Characterization, and Packaging for MEMS and Microelectronics, (8 October 1999); https://doi.org/10.1117/12.368464

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