Nano-oxidation of semiconductor heterostructures with atomic force microscopes: technology and applications

Thomas M. Heinzel; Silvia Luescher; Andreas Fuhrer; Gian Salis; Ryan Held; Klaus Ensslin; Werner Wegscheider; Max Bichler

doi:10.1117/12.401643

29 September 2000 Nano-oxidation of semiconductor heterostructures with atomic force microscopes: technology and applications

Thomas M. Heinzel, Silvia Luescher, Andreas Fuhrer, Gian Salis, Ryan Held, Klaus Ensslin, Werner Wegscheider, Max Bichler

Author Affiliations +

Proceedings Volume 4098, Optical Devices and Diagnostics in Materials Science; (2000) https://doi.org/10.1117/12.401643
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

Tunable nanostructures can be patterned in Ga[Al]As heterostructures with an atomic force microscope (AFM). Oxidizing the GaAs cap layer locally by applying a voltage to the AFM tip leads to depletion of the electron gas underneath the oxide. Here, we describe this type of AFM lithography as a tool to fabricate tunable nanostructures. Novel technological options are discussed, and the electronic properties of the resulting confinement is characterized. As an example for the versatility of this technique, we present electronic transport measurements on quantum wires.

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Thomas M. Heinzel, Silvia Luescher, Andreas Fuhrer, Gian Salis, Ryan Held, Klaus Ensslin, Werner Wegscheider, and Max Bichler "Nano-oxidation of semiconductor heterostructures with atomic force microscopes: technology and applications", Proc. SPIE 4098, Optical Devices and Diagnostics in Materials Science, (29 September 2000); https://doi.org/10.1117/12.401643

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