Paper
2 November 2000 Variable angle spectroscopic ellipsometry in the vacuum ultraviolet
John A. Woollam, James N. Hilfiker, Thomas E. Tiwald, Corey L. Bungay, Ron A. Synowicki, Duane E. Meyer, Craig M. Herzinger, Galen L. Pfeiffer, Gerald T. Cooney, Steven E. Green
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Abstract
Optical properties of thin films and bulk materials at short wavelengths, including 157 nm and shorter, are needed for development of new lithographic processes, new fundamental science, and new metrology in the semiconductor, optical and data storage industries. Variable angle spectroscopic ellipsometry offers non-destructive and precise measurement of thin film thickness and refractive index in the wavelength range from 140 nm to 1700 nm (0.73 eV to 8.9 eV). The addition of short wavelengths allows analysis of multilayer dielectric stacks, often difficult to do using visible spectroscopy alone. Another major application is in study of wide bandgap materials such as SiC and GaN related compound semiconductors for blue lasers and detectors. This paper reviews the present status of spectroscopic ellipsometry applications in the vacuum ultraviolet.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John A. Woollam, James N. Hilfiker, Thomas E. Tiwald, Corey L. Bungay, Ron A. Synowicki, Duane E. Meyer, Craig M. Herzinger, Galen L. Pfeiffer, Gerald T. Cooney, and Steven E. Green "Variable angle spectroscopic ellipsometry in the vacuum ultraviolet", Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); https://doi.org/10.1117/12.405820
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CITATIONS
Cited by 13 scholarly publications and 1 patent.
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KEYWORDS
Vacuum ultraviolet

Spectroscopic ellipsometry

Dielectrics

Silicon carbide

Ellipsometry

Refractive index

Thin films

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