Parametric processes in GaAs/Alox structures

Vincent Berger; Giuseppe Leo; Alfredo DeRossi; Michel Calligaro; Xavier Marcadet; Andrea Fiore; Julien Nagle

doi:10.1117/12.379906

23 March 2000 Parametric processes in GaAs/Alox structures

Vincent Berger, Giuseppe Leo, Alfredo DeRossi, Michel Calligaro, Xavier Marcadet, Andrea Fiore, Julien Nagle

Proceedings Volume 3928, Nonlinear Materials, Devices, and Applications; (2000) https://doi.org/10.1117/12.379906
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States

Abstract

We discuss here the feasibility of an optical parametric oscillator integrated on a GaAs chip, after reviewing the recent frequency conversion experiments using from birefringence in GaAs/oxidized-AlAs (Alox) waveguides. Recently, phase-matching has been demonstrated for the first time in a GaAs-based waveguide, using form birefringence in multilayer heterostructures GaAs/Alox. Birefringence n(TE)- n(TM) from 0.15 to 0.2 have been measured for different GaAs/Alox waveguides, which is sufficient to phase match mid-IR generation between 3 micrometers and 10 micrometers by difference frequency generation form two near-IR beams. A second step was the observation of parametric fluorescence. Results on parametric fluorescence at 2.1 micrometers will be described, in an oxidized AlGaAs form-birefringent waveguide, consisting of a high-index, strongly birefringent GaAs-Alox core embedded in an AlGaAs cladding. One of the most existing perspectives opened with this new type of nonlinear material is the realization of an optical parametric oscillator on a GaAs chip. To this aim, minimization of losses is the most crucial point. A typical calculated value of this threshold is less than 70 mW for 1 cm^-1 losses, and with 90 percent reflection coefficients. The level of losses has been reduced from 2 cm^-1 in ridges obtained by a standard reactive ion etching technique, to less than 0.5 cm^-1 in ridges realized with a more refined reactive ion etching process, using a 'three layer' mask. There is still a need for an improvement of the waveguide fabrication process, before reaching the oscillation threshold.

Citation Download Citation

Vincent Berger, Giuseppe Leo, Alfredo DeRossi, Michel Calligaro, Xavier Marcadet, Andrea Fiore, and Julien Nagle "Parametric processes in GaAs/Alox structures", Proc. SPIE 3928, Nonlinear Materials, Devices, and Applications, (23 March 2000); https://doi.org/10.1117/12.379906

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