GaN-based MQW light-emitting devices

Masayoshi Koike; Shiro Yamasaki; Yuta Tezen; Seiji Nagai; Sho Iwayama; Akira Kojima; Toshiya Uemura; Atsuo Hirano; Hisaki Kato

doi:10.1117/12.382839

17 April 2000 GaN-based MQW light-emitting devices

Masayoshi Koike, Shiro Yamasaki, Yuta Tezen, Seiji Nagai, Sho Iwayama, Akira Kojima, Toshiya Uemura, Atsuo Hirano, Hisaki Kato

Author Affiliations +

Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382839
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The GaN-based MQW laser diodes have been improved excellently by introducing GaN/GaInN optical-guiding. The continuous wave laser operation at room temperature has been achieved at the wavelength of 410 nm. The lifetime of room temperature continuous wave operation is longer than 60 minutes at around 1 mW output. The external efficiencies of GaInN/GaN MQW blue and green light emitting diodes (LEDs) have been increased by newly developed flip-chip (FC) type LED lamp structure. The luminous intensities of the FC-type blue and green LEDs were typically 6 cd and 14 cd at 20 mA, respectively. The FC-type blue and green LEDs are the brightest levels in the world currently. The peak wavelengths and full widths at half maximums were typically 464 nm and 27 nm for the blue LEDs, and 515 nm and 32 nm for the green LEDs.

Citation Download Citation

Masayoshi Koike, Shiro Yamasaki, Yuta Tezen, Seiji Nagai, Sho Iwayama, Akira Kojima, Toshiya Uemura, Atsuo Hirano, and Hisaki Kato "GaN-based MQW light-emitting devices", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382839

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