Optical and optomechanical structures in hybrid sol-gel materials for use in micro-optical systems

Raviv Levy; Michael R. Descour; Terho K. Kololuoma; Sanna M. Aikio; Juha T. Rantala

doi:10.1117/12.384322

2 May 2000 Optical and optomechanical structures in hybrid sol-gel materials for use in micro-optical systems

Raviv Levy, Michael R. Descour, Terho K. Kololuoma, Sanna M. Aikio, Juha T. Rantala

Proceedings Volume 3943, Sol-Gel Optics V; (2000) https://doi.org/10.1117/12.384322
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We are developing a silicon-based micro-optical table (MOT) on which various passive and active optical elements can be positioned with sufficient accuracy so that no further alignment is necessary. In order to achieve a zero-alignment assembly of micro-optical systems, we take advantage of lithographic patterning. Conventional lithography is used in combination with a deep reactive ion etch (DRIE) process for silicon in order to pattern a silicon substrate that plays the role of a micro-optical table. Lithography is also used to pattern optical and opto-mechanical structures on optical elements. Specifically, the hybrid sol-gel method is employed in the fabrication of optical and opto-mechanical structures into a photosensitive glass materials. High optical quality thick films and structures are fabricated by a one-step spin-coating process followed by direct UV imprinting. We have achieved a material thickness of 27.5 microns and a maximum patterned thickness of 17.4 microns at an aspect ratio of 0.6. The material exhibits a minimum transmittance of 97 percent between 400-1100 nm, an index of refraction of 1.49, and an rms surface of 14.8 roughness of 14.8 nm after development.

Citation Download Citation

Raviv Levy, Michael R. Descour, Terho K. Kololuoma, Sanna M. Aikio, and Juha T. Rantala "Optical and optomechanical structures in hybrid sol-gel materials for use in micro-optical systems", Proc. SPIE 3943, Sol-Gel Optics V, (2 May 2000); https://doi.org/10.1117/12.384322

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