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Proceedings Article

Near-field optical-beam-induced current spectroscopy as a tool for analyzing aging processes in diode lasers

[+] Author Affiliations
Jens W. Tomm, Alexander Richter, Christoph Lienau, Thomas Elsaesser

Max-Born-Institut (Germany)

Johann Luft

Siemens AG (Germany)

Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, 29 (May 2, 1997); doi:10.1117/12.273804
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From Conference Volume 3001

  • In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
  • Hong K. Choi; Peter S. Zory
  • San Jose, CA | February 08, 1997

abstract

We present a near-field optical beam induced current study of aged high power laser diode arrays (LDA). A near-field scanning optical microscope was used as a light source for creating a photocurrent or a photovoltage in the LDA. Mechanisms generating the signal as well as methodical aspects such as resolution limits and application fields of the technique are discussed. The method is demonstrated to provide insight into the microscopic aging properties of LDAs. Both monitoring of the aging status as well as the localization of defects becomes possible.

© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jens W. Tomm ; Alexander Richter ; Christoph Lienau ; Thomas Elsaesser and Johann Luft
"Near-field optical-beam-induced current spectroscopy as a tool for analyzing aging processes in diode lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, 29 (May 2, 1997); doi:10.1117/12.273804; http://dx.doi.org/10.1117/12.273804


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