Paper
2 May 1997 Near-field optical-beam-induced current spectroscopy as a tool for analyzing aging processes in diode lasers
Jens Wolfgang Tomm, Alexander Richter, Christoph Lienau, Thomas Elsaesser, Johann Luft
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Abstract
We present a near-field optical beam induced current study of aged high power laser diode arrays (LDA). A near-field scanning optical microscope was used as a light source for creating a photocurrent or a photovoltage in the LDA. Mechanisms generating the signal as well as methodical aspects such as resolution limits and application fields of the technique are discussed. The method is demonstrated to provide insight into the microscopic aging properties of LDAs. Both monitoring of the aging status as well as the localization of defects becomes possible.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Wolfgang Tomm, Alexander Richter, Christoph Lienau, Thomas Elsaesser, and Johann Luft "Near-field optical-beam-induced current spectroscopy as a tool for analyzing aging processes in diode lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273804
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconductor lasers

Diodes

Absorption

Near field scanning optical microscopy

Near field optics

Image processing

Waveguides

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