Recent advances in type-II interband cascade lasers

Rui Q. Yang; John L. Bradshaw; John D. Bruno; John T. Pham; Donald E. Wortman

doi:10.1117/12.391437

14 July 2000 Recent advances in type-II interband cascade lasers

Rui Q. Yang, John L. Bradshaw, John D. Bruno, John T. Pham, Donald E. Wortman

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391437
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Interband cascade (IC) lasers are a new class of mid-IR light sources, which take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent advances in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6 - 4 micrometer; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., approximately 56 A/cm² at 80 K) and power efficiency exceeding 9% were observed from a mesa-stripe laser in cw operation. Also, these lasers were able to operate at temperatures up to 250 K in pulsed mode and to 120 K in cw mode. We observed from several devices at temperatures above 80 K a slope efficiency of approximately 800 mW/A per facet, corresponding to a differential external quantum efficiency of approximately 500%. Peak optical output powers exceeding 4 W per facet were observed from several type-II IC laser at 80 K.

Citation Download Citation

Rui Q. Yang, John L. Bradshaw, John D. Bruno, John T. Pham, and Donald E. Wortman "Recent advances in type-II interband cascade lasers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391437

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KEYWORDS

Quantum cascade lasers

Continuous wave operation

Laser damage threshold

Semiconductor lasers

Quantum efficiency

Quantum wells

Electrons

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