InGaAs quantum dots for high-performance lasers and single-dot spectroscopy

Alfred W. B. Forchel; Johann-Peter Reithmaier; F. Schaefer; Martin Kamp; M. Bayer

doi:10.1117/12.391489

14 July 2000 InGaAs quantum dots for high-performance lasers and single-dot spectroscopy

Alfred W. B. Forchel, Johann-Peter Reithmaier, F. Schaefer, Martin Kamp, M. Bayer

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391489
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Using molecular beam epitaxy we have developed GaInAs/GaAs quantum dot heterostructures by self organized growth for applications in distributed feedback (DFB) lasers with optimized high temperature performance and for single dot spectroscopy. By using a single active layer, lasers with low- threshold current densities (J_th equals 144 A/cm² for a 2 mm long device) and high internal quantum efficiencies (greater than 90%) were obtained. Ground-state lasing of the quantum dots was observed up to device temperatures of above 200 degrees Celsius. By the combination of ridge waveguide structures with lateral metal gratings complex coupled DFB lasers have been obtained. Threshold currents of 14 mA, differential efficiencies of 0.33 W/A and sidemode suppression ratios of over 50 dB have been achieved. Monomode operation was observed for temperatures from 20 to 213 degrees Celsius. This is the largest temperature range over which the operation a DFB laser has been reported up to now. By etching small mesa structures (typical dimension 100 nm X nm) single dots have been isolated from the dot layers. Single dot spectroscopy provides information on exciton and biexciton properties including e.g. the biexciton binding energy, the Zeemann splittings, polarization anisotropies etc. From optically active transitions of both, bright and dark excitons we determine values for the electron (e) and hole (h) g factors. Furthermore we determine the X singlet-triplet splitting which is found to be enhanced over bulk values by about an order of magnitude due to the increase of the e-h overlap in the QD's.

Citation Download Citation

Alfred W. B. Forchel, Johann-Peter Reithmaier, F. Schaefer, Martin Kamp, and M. Bayer "InGaAs quantum dots for high-performance lasers and single-dot spectroscopy", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391489

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