Paper
4 April 1997 Use of polymer waveguides for optical interconnection in high-speed communication and signal processing systems
Lucie Robitaille, Claire L. Callender, Julian P. Noad, Francois L. Gouin, Carlos Almeida
Author Affiliations +
Abstract
GaAs optoelectronic integrated circuits are having an increasing impact on the development of lightwave communication systems and very high sped digital and analog signal processors. However, cost-effective integration of complex electronic and optoelectronic circuits used in high speed networks or backplane interconnects still presents a significant technological challenge and substantial efforts are being devoted to the development of practical, low-loss integration processes. Photodetector/waveguide integration is a key aspect of the successful packaging of optoelectronic devices. In this work, metal-semiconductor- metal (MSM) photodetectors were integrated with polyimide ridge waveguides, and the processing parameters were varied for optimum performance. The absolute responsivities of the integrated MSM/polyimide waveguide structures were typically 0.5 A/W, and 3 dB bandwidths of 4-6 GHz were measured. Series of 1 X 2 and 1 X 4 photodetector arrays were interconnected, demonstrating a uniform division of the optical signal between the detectors. Results indicate that these arrays offer the potential to fabricate optoelectronic switches that can be used in a variety of high speed and broadband communication systems.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lucie Robitaille, Claire L. Callender, Julian P. Noad, Francois L. Gouin, and Carlos Almeida "Use of polymer waveguides for optical interconnection in high-speed communication and signal processing systems", Proc. SPIE 3005, Optoelectronic Interconnects and Packaging IV, (4 April 1997); https://doi.org/10.1117/12.271107
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KEYWORDS
Waveguides

Sensors

Photodetectors

Etching

Reactive ion etching

Telecommunications

Gallium arsenide

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