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Proceedings Article

Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product

[+] Author Affiliations
Weishu Wu, Aaron R. Hawkins, John E. Bowers

Univ. of California/Santa Barbara (USA)

Proc. SPIE 3006, Optoelectronic Integrated Circuits, 38 (January 22, 1997); doi:10.1117/12.264251
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From Conference Volume 3006

  • Optoelectronic Integrated Circuits
  • Yoon-Soo Park; Ramu V. Ramaswamy
  • San Jose, CA | February 08, 1997

abstract

In an InGaAs/Si avalanche photodetector (APD), Si is used as the multiplication material to provide avalanche gain, while InGaAs is used as the absorption material. High quantum efficiency, high gain-bandwidth product, and low noise for detection of wavelengths between 1.0 micrometer and 1.6 micrometer can be achieved in this way. We present possible design variations and analyze the performance of these APDs. Particular attention is paid to a 10 Gbit/s APD and we design InGaAs/Si APDs with a 3-dB bandwidth larger than 10 GHz and a gain-bandwidth product greater than 400 GHz.

© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Weishu Wu ; Aaron R. Hawkins and John E. Bowers
"Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product", Proc. SPIE 3006, Optoelectronic Integrated Circuits, 38 (January 22, 1997); doi:10.1117/12.264251; http://dx.doi.org/10.1117/12.264251


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