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Proceedings Article

Electrical study of crystalline silicon coimplanted with erbium and oxygen

[+] Author Affiliations
Sang H. Ahn, Jorg Palm, Bo Zheng, Xiaoman Duan, Anuradha Agarwal, Jurgen Michel, Lionel C. Kimerling

Massachusetts Institute of Technology (USA)

Shelby F. Nelson

Colby College (USA)

Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, 144 (April 25, 1997); doi:10.1117/12.273848
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From Conference Volume 3007

  • Silicon-Based Monolithic and Hybrid Optoelectronic Devices
  • Derek C. Houghton; Bahram Jalali
  • San Jose, CA | February 08, 1997

abstract

The sharp luminescence at a wavelength 1.54 micrometers from the 4 f shell of the Er3+ ion in the Si:Er system makes it an excellent candidate for a silicon-based optoelectronic source. To design efficient optoelectronic emitters, it is crucial to understand the excitation and relaxation processes of Si:Er3+. Cz silicon substrates were co- implanted with Er and O at Er beam energies of 320 keV, 400 keV and 4.5 MeV. The implanted substrates were subsequently annealed at temperatures between 600 degree(s)C and 1000 degree(s)C for 30 minutes. Spreading resistance profile and capacitance-voltage measurements show that Er and O implantation into Si generates donors. The donor concentration decreases as annealing temperature increases from 800 degree(s)C to 1000 degree(s)C, and the donor profile moves toward the surface due to oxygen outdiffusion. The number of donors shows a linear correspondence with the luminescence intensity. Hall effect and temperature dependent capacitance measurements reveal the presence of energy levels at 40 meV and 160 meV below the conduction band edge. These observations suggest that the donors are likely to be [Si:ErOx]0/+ complexes and that they provide the gateway to Si:Er3+ excitation. The Si:Er photoluminescence intensity (PL) decreases with increasing temperature in two distinct regimes: the PL intensity is weakly dependent on temperature from 4 K to 100 K and, it shows an activation energy of 160 meV above 100 K. We demonstrate that the first regime is governed by the impurity Auger effect and the second regime is dominated by a phonon-mediated back transfer mechanism through charge transfer at [Si:ErOx]0/+ related traps in the silicon bandgap.

© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Sang H. Ahn ; Jorg Palm ; Bo Zheng ; Xiaoman Duan ; Anuradha Agarwal, et al.
"Electrical study of crystalline silicon coimplanted with erbium and oxygen", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, 144 (April 25, 1997); doi:10.1117/12.273848; http://dx.doi.org/10.1117/12.273848


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