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Proceedings Article

Ge-on-Si high-responsivity near-infrared photodetectors

[+] Author Affiliations
Gianlorenzo Masini, Lorenzo Colace, Gaetano Assanto

INFM and Univ. degli Studi di Roma Tre (Italy)

Hsin-Chiao Luan, Kazumi Wada, Lionel C. Kimerling

Massachusetts Institute of Technology (USA)

Proc. SPIE 3953, Silicon-based Optoelectronics II, 103 (March 15, 2000); doi:10.1117/12.379609
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From Conference Volume 3953

  • Silicon-based Optoelectronics II
  • David J. Robbins; Derek C. Houghton
  • San Jose, CA | January 20, 2000

abstract

We report the fabrication of fast heterojunction Ge/Si photodetectors which, to the best of our knowledge, exhibit the highest near infrared responsivity at normal incidence reported to date. Such performances are related to the quality of the epitaxial Ge film grown by a two-step UHV-CVD process followed by cyclic thermal annealing. We have measured a fast (FWHM equals 850 ps at 1.3 micrometers ) and efficient (R equals 0.55 A/W at 1.3 micrometers and 0.25 A/W at 1.55 micrometers ) photoresponse. Our technology makes these devices suitable for integration with other electronic and optoelectronic components on Si chips. In the paper we discuss processing technology, material quality, device fabrication and performance measurements.

© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Gianlorenzo Masini ; Lorenzo Colace ; Gaetano Assanto ; Hsin-Chiao Luan ; Kazumi Wada, et al.
"Ge-on-Si high-responsivity near-infrared photodetectors", Proc. SPIE 3953, Silicon-based Optoelectronics II, 103 (March 15, 2000); doi:10.1117/12.379609; http://dx.doi.org/10.1117/12.379609


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