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Proceedings Article

Evaluation of irradiation-induced deep levels in Si

[+] Author Affiliations
Kenichiro Kono, Jessica G. Sandland, Kazumi Wada, Lionel C. Kimerling

Massachusetts Institute of Technology (USA)

Proc. SPIE 4140, X-Ray and Gamma-Ray Instrumentation for Astronomy XI, 267 (December 13, 2000); doi:10.1117/12.409120
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From Conference Volume 4140

  • X-Ray and Gamma-Ray Instrumentation for Astronomy XI
  • Kathryn A. Flanagan; Oswald H. W. Siegmund
  • San Diego, CA, USA | July 30, 2000

abstract

The front-illuminated CCD devices on board the Chandra X-ray observatory have been damaged by proton beam irradiation during radiation belt passage. The scattered ions such as protons created the traps in the buried n-channel of the CCD. The effect of proton radiation induced defects in Si is summarized. The generation and evolution of the irradiation defects is studied and its relationship with CCD performance is discussed. The methods for enhancement of dissociation of defects by biasing and/or light illumination are proposed to recover the performance of CCD.

© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Kenichiro Kono ; Jessica G. Sandland ; Kazumi Wada and Lionel C. Kimerling
"Evaluation of irradiation-induced deep levels in Si", Proc. SPIE 4140, X-Ray and Gamma-Ray Instrumentation for Astronomy XI, 267 (December 13, 2000); doi:10.1117/12.409120; http://dx.doi.org/10.1117/12.409120


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