Evaluation of irradiation-induced deep levels in Si

Kenichiro Kono; Jessica G. Sandland; Kazumi Wada; Lionel C. Kimerling

doi:10.1117/12.409120

13 December 2000 Evaluation of irradiation-induced deep levels in Si

Kenichiro Kono, Jessica G. Sandland, Kazumi Wada, Lionel C. Kimerling

Proceedings Volume 4140, X-Ray and Gamma-Ray Instrumentation for Astronomy XI; (2000) https://doi.org/10.1117/12.409120
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

The front-illuminated CCD devices on board the Chandra X-ray observatory have been damaged by proton beam irradiation during radiation belt passage. The scattered ions such as protons created the traps in the buried n-channel of the CCD. The effect of proton radiation induced defects in Si is summarized. The generation and evolution of the irradiation defects is studied and its relationship with CCD performance is discussed. The methods for enhancement of dissociation of defects by biasing and/or light illumination are proposed to recover the performance of CCD.

Citation Download Citation

Kenichiro Kono, Jessica G. Sandland, Kazumi Wada, and Lionel C. Kimerling "Evaluation of irradiation-induced deep levels in Si", Proc. SPIE 4140, X-Ray and Gamma-Ray Instrumentation for Astronomy XI, (13 December 2000); https://doi.org/10.1117/12.409120

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