CD variation in 30-kV EBL due to resist heating: experiment and simulation

Sergey V. Babin; Peter Hudek; Ivan Kostic; Igor Yu. Kuzmin

doi:10.1117/12.275800

7 July 1997 CD variation in 30-kV EBL due to resist heating: experiment and simulation

Sergey V. Babin, Peter Hudek, Ivan Kostic, Igor Yu. Kuzmin

Proceedings Volume 3048, Emerging Lithographic Technologies; (1997) https://doi.org/10.1117/12.275800
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Distortion of critical dimension (CD) is an important problem in electron beam lithography. Two main reasons for the distortions are proximity effects and resist heating. The influence of both these factors is examined for a 30 kV variably shaped electron beam lithography system. A change of linewidth with exposure dose was experimentally measured at variable exposure conditions of a pattern. In this way, the influence of resist heating was varied while electron scattering was constant. A simulation method was developed that allows one to take into account the contribution of proximity effects and resist heating to a linewidth change. An advanced model of resist heating was used for simulation. This method can be used to predict CD change. A technique for determination of a heat-to-dose transfer coefficient was proposed.

Citation Download Citation

Sergey V. Babin, Peter Hudek, Ivan Kostic, and Igor Yu. Kuzmin "CD variation in 30-kV EBL due to resist heating: experiment and simulation", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275800

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